IPU95R750P7AKMA1

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Description: N-CH 950V 9A 750mOhm TO251 生产商: INFINEON 产品描述代码: IPU95R750P7 Rutronik No.: TMOS2473 包装单位: 75 最低订购量: 1500 封装: IPAK 包装: TUBE

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参数

Configuration: N-CH
V(DS): 950 V
I(D)at Tc=25°C: 9 A
RDS(on)at 10V: 750 mOhm
Q(g): 23 nC
P(tot): 73 W
R(thJC): 1.7 K/W
Logic level: NO
Mounting: THT
Technology: CoolMOS
Fast bodydiode: YES
P(tot): NO
封装: IPAK
RoHS Status: RoHS-conform
包装: TUBE

生产商产品料号: SP001792324
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: China
生产商交期: 19 周

描述

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in

Summary of Features

Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss
Best-in-class DPAK RDS(on) of 450 mΩ
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability

Benefits

Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3
Enabling higher power density designs, BOM savings, and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns

Target Applications