- Configuration
- N-CH
- V(DS)
- 560 V
- I(D)at Tc=25°C
- 7.6 A
- RDS(on)at 10V
- 600 mOhm
- Q(g)
- 32 nC
- P(tot)
- 32 W
- R(thJC)
- 1.5 K/W
- Logic level
- NO
- Mounting
- THT
- Technology
- CoolMOS C3
- Fast bodydiode
- NO
- P(tot)
- NO
- 封装
- TO-220FP
- RoHS Status
- RoHS-conform
- 包装
- TUBE
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- B
- 生产商交期
- 54 周
Description:
Summary of Features
- Low specific on-state resistance
- (R on*A)
- Very low energy storage in output capacitance (E oss) @400V
- Low gate charge (Q g)
- Fieldproven CoolMOS™ quality
- CoolMOS™ technology has been manufactured by Infineon since 1998
Benefits
- High efficiency and power density
- Outstanding cost/performance
- High reliability
- Ease-of-use
Target Applications
- Server
- Telecom
- Consumer
- PC power
- Adapter
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