数据手册- Configuration
- N-CH
- V(DS)
- 650 V
- I(D)at Tc=25°C
- 6 A
- RDS(on)at 10V
- 660 mOhm
- Q(g)
- 22 nC
- P(tot)
- 63 W
- R(thJC)
- 2 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- CoolMOSCFD
- Fast bodydiode
- YES
- P(tot)
- NO
- 封装
- D2PAK
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Malaysia
- ABC 编码
- B
- 生产商交期
- 54 周
650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Summary of Features
- 650V technology with integrated fast body diode
- Limited voltage overshoot during hard commutation
- Significant Q g reduction compared to 600V CFD technology
- Tighter R DS(ON) max to R DS(on) typ window
- Easy to design-in
- Lower price compared to 600V CFD technology
Benefits
- Low switching losses due to low Q rr at repetitive commutation on body diode
- Self limiting di/dt and dv/dt
- Low Q oss
- Reduced turn on and turn of delay times
- Outstanding CoolMOS™ quality
Target Applications
- Telecom
- Server
- Solar
- HID lamp ballast
- LED lighting
- eMobility
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