- Configuration
- P-CH
- V(DS)
- 60 V
- I(D)at Tc=25°C
- 18.6 A
- RDS(on)at 10V
- 130 mOhm
- Q(g)
- 28 nC
- P(tot)
- 81.1 W
- R(thJC)
- 1.85 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- SIPMOS
- Fast bodydiode
- NO
- P(tot)
- NO
- 封装
- D2PAK
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP000102181
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Malaysia
- ABC 编码
- B
- 生产商交期
- 12 周
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Summary of Features
- Enhancement mode
- Avalanche rated
- Pb-free lead plating; RoHS compliant
- Small Signal packages approved to AEC Q101
Target Applications
- Automotive
- Consumer
- DC-DC
- eMobility
- Motor control
- Notebook
- Onboard charger
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