数据手册- V(CE)
- 1200 V
- I(C)
- 75 A
- td(on)
- 150 ns
- td(off)
- 395 ns
- P(tot)
- 150 W
- t(r)
- NO ns
- V(CEsat)
- SMD V
- Bodydiode
- IGBT4
- P(tot)
- NO
- 封装
- 34mm
- RoHS Status
- RoHS-conform
- 包装
- BOX
- 生产商产品料号
- SP000624916
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Slovakia
- ABC 编码
- A
- 生产商交期
- 22 周
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design.
Summary of Features
- Extended Operation Temperature T vj op
- Low Switching Losses
- Low V CEsat
- T vj op = 150°C
- V CEsat with positive Temperature Coefficient
- Isolated Base Plate
- Standard Housing
Benefits
- Flexibility
- Optimal electrical performance
- Highest reliability
Target Applications
- drives
- solar
- cav
- ups
- induction-heating
- welding
您可给我们发订单订购购物车内产品，如有疑问，也可向我们进行无约束力的询价。
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